Nombor Bahagian Pengeluar : | R6507ENXC7G |
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Status RoHS : | Mematuhi ROHS3 |
Pengilang / jenama : | Rohm Semiconductor |
Keadaan Stok : | 998 pcs Stock |
Penerangan : | 650V 7A TO-220FM, LOW-NOISE POWE |
Kapal Dari : | Hong Kong |
Helaian data : | |
Cara Penghantaran : | DHL/Fedex/TNT/UPS/EMS |
Bahagian No. | R6507ENXC7G |
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Pengeluar | LAPIS Technology |
Penerangan | 650V 7A TO-220FM, LOW-NOISE POWE |
Status Status Percuma / Rosh Status | Mematuhi ROHS3 |
Kuantiti Tersedia | 998 pcs |
Helaian data | |
VGS (th) (Max) @ Id | 4V @ 200µA |
VGS (Max) | ±20V |
Teknologi | MOSFET (Metal Oxide) |
Pembekal Peranti Pakej | TO-220FM |
Siri | - |
Rds On (Max) @ Id, VGS | 665mOhm @ 2.4A, 10V |
Kuasa Penyebaran (Max) | 46W (Tc) |
Pakej / Kes | TO-220-3 Full Pack |
Pakej | Tube |
Suhu Operasi | 150°C (TJ) |
pemasangan Jenis | Through Hole |
Input kemuatan (CISS) (Max) @ Vds | 390 pF @ 25 V |
Gate Charge (QG) (Max) @ VGS | 20 nC @ 10 V |
Jenis FET | N-Channel |
FET Ciri | - |
Drive Voltan (Max Rds On, Min Rds On) | 10V |
Parit untuk Source Voltan (Vdss) | 650 V |
Semasa - Drain berterusan (Id) @ 25 ° C | 7A (Ta) |
Nombor produk asas | R6507 |